^.mi-conMPSA13 mpsa14* emitter 1 maximum ratings rating collector-emitter voltage collector -base voltage emitter- base voltage collector current ? continuous total device dissipation @ ta = 25c derate above 25c total device dissipation @ tq = 25c derate above 25c operating and storage junction temperature range symbol vces vcbo vebo |c pd pd tj. tstg value 30 30 10 500 625 5.0 1.5 12 -55 to +150 unit vdc vdc vdc madc mw mw/"c watts mw/uc c to-92 thermal characteristics characteristic thermal resistance, junction to ambient thermal resistance, junction to case symbol rsja rgjc max 200 83.3 unit "c/w c/w electrical characteristics (ta = 25c unless otherwise noted) characteristic symbol mm max unit off characteristics collector-emitter breakdown voltage (|q= 100nadc, 16 = 0) collector cutoff current (vcb= 30 vdc. ie = 0) emitter cutoff current (veb=10vdc, ic = 0) v(br)ces 'cbo 'ebo 30 ? ? ? 100 100 vdc nadc nadc nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at ihe time of going to press. however, nj semi-conductnrs assumes no responsibility for any errors or omissions discovered in its use. \ senii-conductors encournges customers to verify that datasheets are current before placing orders.
MPSA13 mpsa14 electrical characteristics (t^ = 25"c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics(i) dc current gain dc = 10madc, vce = 5.0 vdc) MPSA13 mpsa14 (ic= idornadc, vce = 5.0 vdc) MPSA13 mpsa14 collector- emitter saturation voltage (1c = 100 madc, ib = 0,1 madc) base -emitter on voltage (1c = 100 madc, vce = 5-0 vdc) hfe vce(sat) vbe(on) 5,000 10,000 10,000 20,000 ? ? ? ? 1.5 2.0 vdc vdc small-signal characteristics current-gain - bandwidth product^) (1c = 10 madc, vce = 5.0 vdc, f = 100 mhz) it 125 ? mhz 1. pulse test: pulse width z 300 us; duty cycle z 2.0%. 2- ft = ihfel - ftest.
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